Datasheet Details
| Part number | AON6754 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.52 KB |
| Description | N-Channel MOSFET |
| Download | AON6754 Download (PDF) |
|
|
| Part number | AON6754 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.52 KB |
| Description | N-Channel MOSFET |
| Download | AON6754 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.8mΩ < 3.3mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G 8 7 6 5 PIN1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 85 66 329 52 42 65 106 36 83 33 7.3 4.7 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev1: Mar 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6754 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=30V, VGS=0V C TJ=125° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.4 1.7 1.5 2.1 2.1 90 0.39 0.6 85 2796 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 1200 165 1.5 46.8 VGS=10V, VDS=15V, ID=20A 22.3 8.4 8.6 9
AON6754 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AON6752 | N-Channel MOSFET |
| AON6756 | 30V N-Channel MOSFET |
| AON6758 | N-Channel MOSFET |
| AON6702 | 30V N-Channel MOSFET |
| AON6702L | 30V N-Channel MOSFET |
| AON6708 | N-Channel MOSFET |
| AON6710 | Field Effect Transistor |
| AON6712 | N-Channel MOSFET |
| AON6716 | N-Channel MOSFET |
| AON6718 | 30V N-Channel MOSFET |