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AON6710 - Field Effect Transistor

General Description

SRFETTM The AON6710/L uses advanced trench technology with a monolithically integrated Schottky www.DataSheet4U.com diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications.

Key Features

  • VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V) Top View Fits SOIC8 footprint ! S S S G D D D D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain BJ Current TC=25°C TC=100°C ID IDM IDSM IAR C Maximum 30 ±20 30 30 100 19 15 30 135 62 25 2.5 1.6 -55 to 150 Units V V A Pulsed Drain Current Co.

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SRFET AON6710 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AON6710/L uses advanced trench technology with a monolithically integrated Schottky www.DataSheet4U.com diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. AON6710 and AON6710L are electrically identical. -RoHS Compliant -AON6710L is Halogen Free Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.