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AON6718L - N-Channel MOSFET

General Description

SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Key Features

  • VDS (V) = 30V ID = 80A RDS(ON) < 3.7mΩ RDS(ON) < 5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Fits SOIC8 footprint ! S S S G D Top View D D D D G S SRFET TM Soft Recovery MOSFET : Integrated Schottky Diode DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Re.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 80A RDS(ON) < 3.7mΩ RDS(ON) < 5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.