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AON6712 - N-Channel MOSFET

General Description

The AON6712 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Standard Product AON6712 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.5V) Top View Fits SOIC8 footprint ! S S S G D D D D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B,J Current TC=25°C TC=100°C ID IDM IDSM IAR C Maximum 30 ±12 30 30 80 16 13 42 264 62.5 25 2.5 1.6 -55 to 150 Units V V A Pulsed Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRFET AON6712 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AON6712 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AON6712 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.