Datasheet Details
| Part number | AON6756 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.21 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6756 Download (PDF) |
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| Part number | AON6756 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.21 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6756 Download (PDF) |
|
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 36A < 2.4mΩ < 4mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 36 28 144 36 32 60 90 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.2.0: July 2014 www.aosmd.com Page 1 of 6 AON6756 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.5 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 1.7 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 2 2.4 mΩ 2.6 3.2 VGS=4.5V, ID=20A 2.8 4 mΩ gFS Forw
AON6756 30V N-Channel AlphaMOS General.
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