Datasheet Details
| Part number | AON6758 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 314.44 KB |
| Description | N-Channel MOSFET |
| Download | AON6758 Download (PDF) |
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| Part number | AON6758 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 314.44 KB |
| Description | N-Channel MOSFET |
| Download | AON6758 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 3.6mΩ < 5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Top View Bottom View 1 2 3 4 8 7 6 5 D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 32 25 128 27 21 50 63 36 41 16 4.1 2.6 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 2.6 Max 30 64 3 Units ° C/W ° C/W ° C/W Rev 1: April 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6758 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=30V, VGS=0V C TJ=125° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.4 1.8 3 3.9 3.9 85 0.48 0.6 32 1975 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 913 92 1.5 29.0 VGS=10V, VDS=15V, ID=20A 13.6 5.8 5.3 7.9 VG
AON6758 30V N-Channel AlphaMOS General.
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