Datasheet Details
| Part number | AONR62921 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 371.61 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AONR62921-AlphaOmegaSemiconductors.pdf |
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Overview: AONR62921 100V N-Channel MOSFET General.
| Part number | AONR62921 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 371.61 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AONR62921-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Logic Level Gate Drive • RoHS and Halogen-Free Compliant Applications • Synchronous Rectification in Power Adaptors Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 50A < 10.2mΩ < 12.6mΩ DFN 3.3x3.3 EP Top View Bottom View PIN 1 PIN 1 Orderable Part Number AONR62921 Package Type DFN 3.3x3.3 Top View D S1 S2 S3 G4 8D 7D 6D 5D G S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 50 31.5 135 13.5 10.5 37 68 54 21.5 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 50 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 30 60 2.3 Units °C/W °C/W °C/W Rev.1.0: February 2018 www.aosmd.com Page 1 of 6 AONR62921 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=13.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=11.5A gFS Forward Transconductance VDS=5V, ID=13.5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Cu
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