Datasheet Details
| Part number | AONR32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR32314 Download (PDF) |
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| Part number | AONR32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR32314 Download (PDF) |
|
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• Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 8.7mΩ < 12.3mΩ DFN 3x3_EP D Top View Bottom View Top View PIN1 Orderable Part Number AONR32314 PIN1 S1 S2 S3 G4 8D 7D 6D G 5D S Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 25.5 90 17 13.5 33 27 24 9.6 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 24 47 Maximum Junction-to-Case Steady-State RqJC 4.2 Max 30 60 5.2 Units °C/W °C/W °C/W Rev.2.1: September 2022 www.aosmd.com Page 1 of 6 AONR32314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=17A VGS=4.5V, ID=14A Forward Transconductance VDS=5V, ID=17A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Cap
AONR32314 30V N-Channel MOSFET General.
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|---|---|
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