Datasheet Details
| Part number | AONR32320C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.29 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR32320C Download (PDF) |
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| Part number | AONR32320C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.29 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR32320C Download (PDF) |
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 12A < 21mΩ < 30mΩ Applications • DC/DC Converters in Computing • Suitable for general purpose 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View Top View D Pin 1 Orderable Part Number AONR32320C Pin 1 S1 S2 S3 G4 8D 7D 6D 5D G S Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 11.5 36 9.5 7.5 11 6 11 4.5 3.1 2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 25 62 Maximum Junction-to-Case Steady-State RqJC 8.8 Max 40 75 11 Units °C/W °C/W °C/W Rev.1.0: February 2019 www.aosmd.com Page 1 of 6 AONR32320C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=9.5A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=9.5A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMI
AONR32320C 30V N-Channel MOSFET General.
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