Datasheet Details
| Part number | AONR36326C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 755.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36326C Download (PDF) |
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| Part number | AONR36326C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 755.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36326C Download (PDF) |
|
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• Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 12A < 9.8mΩ < 15.9mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN 3x3 EP D Top View Bottom View Top View Pin 1 S1 S2 Pin 1 S 3 G4 8D 7D 6D 5D G S Orderable Part Number AONR36326C Package Type DFN 3X3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain CurrentG TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 12 48 12 11 20 10 20.5 8 3.1 2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 5 Max 40 70 6 Units °C/W °C/W °C/W Rev.1.2: April 2021 www.aosmd.com Page 1 of 6 AONR36326C 0 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forwa
AONR36326C 30V N-Channel MOSFET General.
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