Datasheet Details
| Part number | AONR36329 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.49 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36329 Download (PDF) |
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| Part number | AONR36329 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.49 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36329 Download (PDF) |
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 20A < 10.5mΩ < 15.5mΩ HBM Class 2 DFN 3x3 EP Top View Bottom View D Top View PIN 1 S1 S2 S3 G4 8D 7D 6D G 5D S Orderable Part Number AONR36329 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 20 20 74 13.6 10.9 40 8 20.8 8.3 3.1 2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 5 Max 40 75 6 Units °C/W °C/W °C/W Rev.1.0: March 2022 www.aosmd.com Page 1 of 6 AONR36329 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance VGS=4.5V, ID=20A VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V
AONR36329 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONR36321 | 30V N-Channel MOSFET |
| AONR36326C | 30V N-Channel MOSFET |
| AONR36366 | 30V N-Channel MOSFET |
| AONR36368 | 30V N-Channel MOSFET |
| AONR32314 | 30V N-Channel MOSFET |
| AONR32320C | 30V N-Channel MOSFET |
| AONR32324 | 32V N-Channel MOSFET |
| AONR34332C | 30V N-Channel MOSFET |
| AONR21117 | 20V P-Channel MOSFET |
| AONR21305C | 30V P-Channel MOSFET |