Datasheet Details
| Part number | AONR36366 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 482.87 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AONR36366 Datasheet
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| Part number | AONR36366 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 482.87 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AONR36366 Datasheet
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• Trench Power LV MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 34A < 3.5mΩ < 5.2mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View D Top View PIN 1 Orderable Part Number AONR36366 S1 8D S2 7D S3 6D G4 5D G PIN 1 S Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 34 34 136 30 25 60 18 62 25 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 1.6 Max 25 55 2 Units °C/W °C/W °C/W Rev.2.0: September 2023 www.aosmd.com Page 1 of 6 AONR36366 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V
AONR36366 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONR36368 | 30V N-Channel MOSFET |
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| AONR36329 | 30V N-Channel MOSFET |
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| AONR32320C | 30V N-Channel MOSFET |
| AONR32324 | 32V N-Channel MOSFET |
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| AONR21305C | 30V P-Channel MOSFET |