Datasheet Details
| Part number | AONR34332C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 531.09 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR34332C Download (PDF) |
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| Part number | AONR34332C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 531.09 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR34332C Download (PDF) |
|
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• Trench Power MOSFET technology • Low RDS(ON) at 2.5V VGS • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Load switch, battery switch in portable devices Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD Level 100% UIS Tested 100% Rg Tested 30V 100A < 1.6mΩ < 1.9mΩ < 2.9mΩ HBM Class 2 DFN 3.3x3.3 EP Top View Bottom View Pin 1 Pin 1 Top View D S1 S2 S3 G4 8D 7D 6D G 5D S Orderable Part Number AONR34332C Package Type DFN3.3x3.3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 100 95 400 40 32 70 123 56 22 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 50 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 30 60 2.2 Units °C/W °C/W °C/W Rev.2.0: October 2019 www.aosmd.com Page 1 of 6 AONR34332C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=250μA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=10V, ID=20A 30 TJ=55°C 0.5 RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A VGS=2.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0
AONR34332C 30V N-Channel MOSFET General.
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|---|---|
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