Datasheet Details
| Part number | AONR36321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 371.65 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36321 Download (PDF) |
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| Part number | AONR36321 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 371.65 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONR36321 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note H DFN 3.3x3.3 EP Top View Bottom View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 80A < 4.3mΩ < 7.1mΩ HBM Class H2 Pin 1 Orderable Part Number AONR36321 Package Type DFN 3.3x3.3 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 80 52 164 19 15 50 13 50 20 2.7 1.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 35 55 Maximum Junction-to-Case Steady-State RqJC 2 Max 45 70 2.5 Units °C/W °C/W °C/W Rev.1.1: Feburary 2024 www.aosmd.com Page 1 of 6 AONR36321 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS
AONR36321 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
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| AONR36366 | 30V N-Channel MOSFET |
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| AONR32314 | 30V N-Channel MOSFET |
| AONR32320C | 30V N-Channel MOSFET |
| AONR32324 | 32V N-Channel MOSFET |
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