Datasheet Details
| Part number | AONR26309A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.29 KB |
| Description | 30V Complementary MOSFET |
| Download | AONR26309A Download (PDF) |
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Overview: AONR26309A 30V Complementary MOSFET General.
| Part number | AONR26309A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.29 KB |
| Description | 30V Complementary MOSFET |
| Download | AONR26309A Download (PDF) |
|
|
|
The AONR26309A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in inverter and other applications.
Product Summary N-channel VDS (V) = 30V ID = 14A RDS(ON) < 20mW RDS(ON) < 26mW P-channel VDS (V) = -30V ID = -21A RDS(ON) < 32mW RDS(ON) < 55mW ESD protection (VGS = ±10V) (VGS = ±10V) (VGS = ±4.5V) 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View D1 D2 Top View Pin 1 S1 G1 S2 G2 Pin1 D1/D2 D1/D2 D1/D2 G1 D1/D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25°C TC=100°C ID 14 9 Pulsed Drain Current C IDM 35 Continuous Drain Current A TA=25°C TA=70°C 6.5 IDSM 5 Avalanche Current C IAR 15 Repetitive avalanche energy L=0.1mH C EAR 11 TC=25°C Power Dissipation B TC=100°C PD 7 2.8 TA=25°C Power Dissipation A TA=70°C 1.5 PDSM 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics: N-channel Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 40 70 Maximum Junction-to-Case B Steady-State RqJC 15 Thermal Characteristics: P-channel Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 40 70 Maximum Junction-to-Case B Steady-State RqJC 5 Max P-channel -30 ±20 -21 -13 -44 -5.7 -4.4 -20 20 20.8 8.3 1.5 0.9 -55 to 150 Max 50 85 18 Max 50 85 6 Units V V A A mJ W W °C Units °C/W °C/W °C/W Units °C/W °C/W °C/W Rev 1.2: May 2020 www.aosmd.com Page 1 of 11 AONR26309A N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage
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