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Alpha & Omega Semiconductors

AOT2502L Datasheet Preview

AOT2502L Datasheet

150V N-Channel MOSFET

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AOT2502L/AOB2502L
150V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
150V
106A
< 11mΩ (10.7mΩ*)
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
Top View
TO-220
Bottom View
DD
G DS
AOT2502L
S DG
Orderable Part Number
AOT2502L
AOB2502L
Package Type
TO-220
TO-263
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.3mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
* Surface mount package TO-263
Top View
D
TO-263
D2PAK
Bottom View
D
D
S
G
AOB2502L
Form
Tube
Tape & Reel
G
S
G
S
Minimum Order Quantity
1000
800
Maximum
150
±20
106
67
250
18.5
14.5
40
240
180
277
111
8.3
5.3
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Typ Max
12 15
50 60
0.35 0.45
Units
°C/W
°C/W
°C/W
Rev.1.0: December 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOT2502L Datasheet Preview

AOT2502L Datasheet

150V N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=150V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
TO-220
VGS=10V, ID=20A
TO-263
TJ=55°C
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=75V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=75V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=75V, RL=3.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
150
3.5
1
Typ
4.3
9.2
17.8
8.9
50
0.7
3010
345
14
2
43
18
10
19
24
30
8.5
75
880
Max Units
1
5
±100
5.1
11
21.5
10.7
1
106
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
3Ω
60 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
www.aosmd.com
Page 2 of 6


Part Number AOT2502L
Description 150V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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