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AOT2N60 - 2A N-Channel MOSFET

General Description

The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Key Features

  • VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 2 1.6 8 2 60 120 5 74 0.6 -50.

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www.datasheet4u.com AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET General Description The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.