Datasheet Details
| Part number | AOT20N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.56 KB |
| Description | 20A N-Channel MOSFET |
| Datasheet | AOT20N60-AlphaOmegaSemiconductors.pdf |
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Overview: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General.
| Part number | AOT20N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.56 KB |
| Description | 20A N-Channel MOSFET |
| Datasheet | AOT20N60-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 700V@150℃ 20A < 0.37W D G S D G S GD AOT20N60 AOTF20N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20N60 AOTF20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT20N60 65 0.5 AOTF20N60 65 -- Maximum Junction-to-Case RqJC 0.3 2.5 * Drain current limited by maximum junction temperature.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 3.1: May 2024 www.aosmd.com Page 1 of 6 AOT20N60/AOTF20N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage c
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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