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AOT210L - 30V N-Channel MOSFET

General Description

The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.

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AOT210L/AOB210L 30V N-Channel MOSFET General Description The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D Top View TO-263 D2PAK Bottom View D D D G G D S S D G G S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.