AOT3N60 - 600V N-Channel MOSFET

Alpha & Omega Semiconductors

AOT3N60 Datasheet Preview — Preview of AOT3N60 PDF

Datasheet Details

Part number	AOT3N60
Manufacturer	Alpha & Omega Semiconductors
File Size	197.94 KB
Description	600V N-Channel MOSFET
Datasheet	AOT3N60_AlphaOmegaSemiconductors.pdf

AOT3N60 Product details

Description

The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Features

VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested! Top View D TO-220 G G S D S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.5 B Current TC=100°C ID 1.6 Pulsed Drain Current Avalanche Current C C C Units V V A A mJ mJ V/ns W W/ C °C °C o IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typic.

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Published: May 12, 2009 |