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AOT402 - N-Channel MOSFET

General Description

The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 105V ID = 110 A (VGS = 10V) RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A RDS(ON) < 10 mΩ (VGS = 6V) Top View Drain Connected to Tab DataShee G S DataSheet4U. com G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 105 ±25 110 85 200 100 540 300 150 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C.

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT402L is a Green Product ordering option. AOT402 and AOT402L are electrically identical. TO-220 D Features VDS (V) = 105V ID = 110 A (VGS = 10V) RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A RDS(ON) < 10 mΩ (VGS = 6V) Top View Drain Connected to Tab DataShee G S DataSheet4U.