Datasheet Details
| Part number | AOT42S60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 524.24 KB |
| Description | 600V Power Transistor |
| Datasheet | AOT42S60L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT42S60L/AOB42S60L 600V 37A a MOS TM Power Transistor General.
| Part number | AOT42S60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 524.24 KB |
| Description | 600V Power Transistor |
| Datasheet | AOT42S60L-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 166A 0.109W 40nC 9.2mJ Top View TO-220 TO-263 D2PAK D D D AOT42S60L Orderable Part Number AOT42S60L AOB42S60L S D G G S G S AOB42S60L Package Type TO-220 Green TO-263 Green Form Minimum Order Quantity Tube 1000 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT42S60L/AOB42S60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT42S60L/AOB42S60L 65 0.5 Maximum Junction-to-Case RqJC 0.3 Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev5.1: January 2024 www.aosmd.com Page 1 of 6 AOT42S60L/AOB42S60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=6
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT42S60 | N-Channel MOSFET | INCHANGE |
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