| Description | Product Summary The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS... |
| Features |
d Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
37 23 166 11 234 1345
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead...
|
| Datasheet |
 AOT42S60L Datasheet 524.24KB |
