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AOT462 - N-Channel MOSFET

General Description

The AOT462 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

This device is suitable for use in UPS, high current switching applications.

Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 60V ID = 70A RDS(ON) < 18mΩ (V GS = 10V) (VGS = 10V) General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com AOT462 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 60V ID = 70A RDS(ON) < 18mΩ (V GS = 10V) (VGS = 10V) General Description The AOT462 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications). TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.