Datasheet4U Logo Datasheet4U.com

AOTF11S60 Datasheet Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Download the AOTF11S60 datasheet PDF. This datasheet also includes the AOT11S60 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AOT11S60_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F(3kVAC;1s) TO-263 D2PAK D 700V 45A 0.399W 11nC 2.7mJ D AOT11S60L S D G AOTF11S60(L) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

Overview

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor.