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Alpha & Omega Semiconductors

AOTF12N30 Datasheet Preview

AOTF12N30 Datasheet

N-Channel MOSFET

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AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOT12N30/AOTF12N30 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N30L/AOTF12N30L
TO-220
Top View
TO-220F
350V@150
11.5A
< 0.42
D
S
G
AOT12N30
D
G
AOTF12N30
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT12N30
AOTF12N30
Drain-Source Voltage
VDS
300
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAS
EAS
dv/dt
11.5
11.5*
7.3
7.3*
29
3.8
430
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
132
1
36
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT12N30
65
0.5
AOTF12N30
65
--
Maximum Junction-to-Case
RθJC
0.95
3.5
S
Units
V
V
A
A
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Nov 2011
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF12N30 Datasheet Preview

AOTF12N30 Datasheet

N-Channel MOSFET

No Preview Available !

AOT12N30/AOTF12N30
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=300V, VGS=0V
VDS=240V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=240V, ID=12A
VGS=10V, VDS=150V, ID=12A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
300
350
V
0.29
V/ oC
1
µA
10
±100 nΑ
3.4
4
4.5
V
0.31 0.42
11
S
0.74 1
V
11.5 A
29
A
500 632 790 pF
55 90 125 pF
3
7
11 pF
1.3 2.7 4.1
10 12.8 16 nC
4.4
nC
4.3
nC
18
ns
31
ns
36
ns
20
ns
130 170 205 ns
1
1.3 1.6
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov 2011
www.aosmd.com
Page 2 of 6


Part Number AOTF12N30
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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