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Alpha & Omega Semiconductors

AOTF12T50P Datasheet Preview

AOTF12T50P Datasheet

N-Channel MOSFET

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AOTF12T50P
500V,12A N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% Rg Tested
TO-220F
600V
48A
< 0.5Ω
22nC
4µJ
D
AOTF12T50P
GDS
G
S
Orderable Part Number
AOTF12T50P
AOTF12T50PL
Package Type
TO-220F Pb Free
TO-220F Green
Form
Tube
Tube
Minimum Order Quantity
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOTF12T50P AOTF12T50PL
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
±30
Continuous Drain
Current
TC=25°C
TC=100°C
ID
12*
8*
Pulsed Drain Current C
IDM
48
Avalanche Current C L=1mH
IAR
12
Repetitive avalanche energy C
EAR
72
Single pulsed avalanche energy G
EAS
480
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
43
0.3
33
0.26
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-55 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
°C
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOTF12T50P
65
2.9
AOTF12T50PL
65
3.8
Units
°C/W
°C/W
Rev.2.0: September 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF12T50P Datasheet Preview

AOTF12T50P Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
3
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
VDS=40V, ID=6A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 400V, f=1MHz
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=400V, ID=12A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=12A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
V
600
0.47
V/ oC
1
µA
10
±100 nA
4
5
V
0.39 0.5
10
S
0.74
1
V
12
A
48
A
1477
pF
63
pF
50
pF
90
pF
6.3
pF
2
22
32
nC
8
nC
5.5
nC
37
ns
54
ns
46
ns
28
ns
428
ns
6.1
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: September 2014
www.aosmd.com
Page 2 of 6


Part Number AOTF12T50P
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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