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AOTF15S65 Datasheet Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Download the AOTF15S65 datasheet PDF. This datasheet also includes the AOT15S65 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AOT15S65_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D TO-220F Top View TO-263 D2PAK D 750V 60A 0.29W 17.2nC 3.6mJ D AOT15S65L S GD AOTF15S65(L) S GD S G AOB15S65L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT15S65L/AOB15S65L Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID 15 10 Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

Overview

AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 650V 15A a MOS TM Power Transistor.