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Alpha & Omega Semiconductors

AOTF2142L Datasheet Preview

AOTF2142L Datasheet

N-Channel MOSFET

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AOT2142L/AOTF2142L
40V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
40V
120A / 112A
< 1.9mΩ
< 2.5mΩ
D
AOT2142L
Orderable Part Number
AOT2142L
AOTF2142L
AOTF2142L
Package Type
TO-220
TO-220F
Form
Tube
Tube
G
S
Minimum Order Quantity
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT2142L(Max)
AOTF2142L(Max)
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.3mH C
EAS
±20
120 G
112
120 G
78
600
50
40
60
540
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
48
312
41
156
20
TA=25°C
Power Dissipation A TA=70°C
PDSM
8.3
5.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2142L(Max)
15
60
0.48
AOTF2142L(Max)
15
60
3.6
Units
°C/W
°C/W
°C/W
Rev.3.0: September 2016
www.aosmd.com
Page 1 of 7




Alpha & Omega Semiconductors

AOTF2142L Datasheet Preview

AOTF2142L Datasheet

N-Channel MOSFET

No Preview Available !

AOT2142L/AOTF2142L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum
Body-Diode
Continuous
Current
G
(AOT2142L)
IS
Maximum Body-Diode Continuous Current (AOTF2142L)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=400A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs
Typ
1.8
1.55
2.25
1.95
100
0.66
8320
1438
85
1.15
100
45
25
7
19
7
69
10
26
83
Max Units
V
1
µA
5
±100 nA
2.3
V
1.9
mΩ
2.8
2.5 mΩ
S
1
V
120
A
50
A
pF
pF
pF
1.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: September 2016
www.aosmd.com
Page 2 of 7



Part Number AOTF2142L
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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