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AOTF25S65 Datasheet Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Download the AOTF25S65 datasheet PDF. This datasheet also includes the AOT25S65 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AOT25S65_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 & AOTF25S65L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 750V 104A 0.19W 26.4nC 5.8mC D AOT25S65 DS G AOTF25S65(L) S GD S G AOB25S65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT25S65/AOB25S65 AOTF25S65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 25 25* 16 16* 104 7 96 750 TC=25°C Power Dissipation B Derate above 25oC PD 357 50 2.9 0.4 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT25S65/AOB25S65 65 0.5 AOTF25S65 65 -- Maximum Junction-to-Case RqJC 0.35 2.5 * Drain current limited by maximum junction temperature.

Overview

AOT25S65/AOB25S65/AOTF25S65/AOTF25S65L 650V 25A a MOS TM Power Transistor.