Datasheet Details
| Part number | AOTF20C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 311.17 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF20C60-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF20C60 600V,20A N-Channel MOSFET General.
| Part number | AOTF20C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 311.17 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF20C60-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOTF20C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF20C60L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220F 700@150℃ 20A < 0.25Ω D AOTF20C60 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
G AOTF20C60 600 ±30 20* 11* 145 20 200 1470 100 20 50 0.4 -55 to 150 300 AOTF20C60 65 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev0: Nov 2012 www.aosmd.com Page 1 of 5 AOTF20C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF20C60P | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF20N40 | 20A N-Channel MOSFET |
| AOTF20N40L | 20A N-Channel MOSFET |
| AOTF20N60 | 20A N-Channel MOSFET |
| AOTF20S60 | Power Transistor |
| AOTF20S60L | Power Transistor |
| AOTF2142L | N-Channel MOSFET |
| AOTF2144L | 40V N-Channel MOSFET |
| AOTF2146L | 40V N-Channel MOSFET |
| AOTF2210L | N-Channel MOSFET |
| AOTF22N50 | 22A N-Channel MOSFET |