Datasheet Details
| Part number | AOTF2146L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.22 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOTF2146L-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF2146L 40V N-Channel AlphaSGT TM General.
| Part number | AOTF2146L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.22 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOTF2146L-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Ruggedness • RoHS and Halogen-Free Compliant Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters Top View TO220F Bottom View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 80A < 2.8mΩ < 3.9mΩ D G DS S DG G S Orderable Part Number AOTF2146L Package Type TO-220F Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 80 50 320 42 33.5 38 217 29.5 11.5 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.5 Max 15 55 4.2 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AOTF2146L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Cap
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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