Datasheet Details
| Part number | AOTL66515 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 397.47 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOTL66515-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66515 150V N-Channel AlphaSGT TM General.
| Part number | AOTL66515 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 397.47 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOTL66515-AlphaOmegaSemiconductors.pdf |
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Product Summary • Trench Power MOSFET technology • Combined of low RDS(ON) and wide Safe Operating Area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS 2.0 and Halogen-Free Compliant • Tj=175C Rated Applications • Load switch • BMS • Motor VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View TOLLA Bottom View 150V 200A < 3.9mΩ < 5.5mΩ D D PIN1 Orderable Part Number AOTL66515 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 200 140 730 30 25 100 500 428 214 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.25 Max 15 45 0.35 Units °C/W °C/W °C/W Rev.1.1: September 2022 www.aosmd.com Page 1 of 6 AOTL66515 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum
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