Datasheet Details
| Part number | AOTL66914 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.13 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66914-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66914 100V N-Channel AlphaSGT TM General.
| Part number | AOTL66914 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.13 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66914-AlphaOmegaSemiconductors.pdf |
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• AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON) • Low Gate Charge • Enhanced body diode performacne • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100V 220A < 2.5mΩ < 3mΩ Applications • DC Motor Drive and BMS industrial application • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Max Tj=175°C TOLLA Top View Bottom View D D PIN1 Orderable Part Number AOTL66914 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 220 156 534 42 35 70 245 272 136 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.35 Max 15 45 0.55 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOTL66914 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode
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