| Description | • AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON) • Low Gate Charge • Enhanced body diode performacne • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100V 220A < 2.5mΩ < 3mΩ Applications • DC Motor Drive and BMS industrial application • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Max T... |
| Features |
ation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 220 156 534 42 35 70 245 272 136 10 7
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 10 35...
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| Datasheet |
 AOTL66914 Datasheet 375.13KB |
