Datasheet Details
| Part number | AOTL66918 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.29 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66918-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66918 100V N-Channel MOSFET General.
| Part number | AOTL66918 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.29 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66918-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free Compliant Applications • Load switch • BMS • Motor Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 214A < 4.3mΩ < 5mΩ TOLLA D Top View Bottom View D PIN1(G) S PIN1(G) Orderable Part Number AOTL66918 Package Type TOLLA Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C (≤100μS) IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Diode reverse recovery VDS=0 to 50V,IF≤300A,TJ≤125°C di/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC G S Form Minimum Order Quantity Tape & Reel 2000 Maximum 100 ±20 214 150 710 30 25 70 735 500 500 250 10 7 -55 to 175 Units V V A A A mJ A/us W W °C Typ Max 10 15 35 45 0.2 0.3 Units °C/W °C/W °C/W Rev.1.0: June 2020 www.aosmd.com Page 1 of 6 AOTL66918 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.7 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=2
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|---|---|
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