Datasheet Details
| Part number | AOTS21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 392.78 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOTS21311C-AlphaOmegaSemiconductors.pdf |
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Overview: AOTS21311C 30V P-Channel MOSFET General.
| Part number | AOTS21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 392.78 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOTS21311C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection -30V -5.9A < 45mΩ < 65mΩ HBM Class 1C TSOP-6 Top View Bottom View Top View D D1 6 D D2 5 D G3 4S G Pin1 Orderable Part Number AOTS21311C Package Type TSOP-6 Form Tape & Reel S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5.9 -4.6 -24 2.5 1.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 42 Maximum Junction-to-Ambient A D Steady-State RqJA 68 Maximum Junction-to-Lead Steady-State RqJL 23 Max 50 85 30 Units V V A W °C Units °C/W °C/W °C/W Rev.1.1: June 2023 www.aosmd.com Page 1 of 5 AOTS21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-5.9A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-5.9A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf
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