Datasheet Details
| Part number | AOTS32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOTS32334C-AlphaOmegaSemiconductors.pdf |
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Overview: AOTS32334C 30V N-Channel MOSFET General.
| Part number | AOTS32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOTS32334C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protection 30V 8A < 20mΩ < 26mΩ TSOP6 Top View Bottom View Top View D Pin1 D1 6D D2 G3 5 D G 4S S Orderable Part Number AOTS32334C Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8 6.8 40 2.5 1.6 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 42 68 Maximum Junction-to-Lead Steady-State RqJL 23 Max 50 85 30 Units °C/W °C/W °C/W Rev.1.0: January 2019 www.aosmd.com Page 1 of 5 AOTS32334C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.8 2.3 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C 16 20 mΩ 24 30 VGS=4.5V, ID=7.5A 20 26 mΩ gFS Forward Transconductance VDS=5V, ID=8A 33 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 600 pF 70 pF 60 pF 1
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|---|---|
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