Datasheet Details
| Part number | AOTS32338C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.47 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOTS32338C-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AOTS32338C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.47 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOTS32338C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switching AOTS32338C 30V N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) ESD protection 30V 3.8A < 50mΩ < 57mΩ < 72mΩ TSOP6 Top View Bottom View Top View D D Pin1 Orderable Part Number AOTS32338C G1 1 6 D1 G G S2 2 5 S1 G2 3 4 D2 S S Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 3.8 2.9 22 1.2 0.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 82 111 Maximum Junction-to-Lead Steady-State RqJL 56 Max 100 140 70 Units °C/W °C/W °C/W Rev.1.0: January 2019 www.aosmd.com Page 1 of 5 AOTS32338C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 0.5 1 1.5 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.8A VGS=4.5V, ID=3.6A TJ=125°C 40 50 mΩ 58 73 42 57 mΩ VGS=2.5V, ID=3.2A 50 72 mΩ gFS Forward Transconductance VDS=5V, ID=3.8A 20 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capac
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