AO4420A
Description
The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications.
Product Summary
VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3m H B
Power Dissipation
TA=25°C TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 13.7 9.7 60 20 60 3.1 2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State
RθJA...
