AO4421
Description
The AO4421 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-60V -6.2A < 40m W < 50m W
Top View
SO8
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum -60 ±20 -6.2 -5 -40 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State
Symbol
Typ
Rq JA
24 54
Rq...
