AO4470
Description
.. provide
Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ RDS(ON) < 6.2mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.5V)
The AO4470 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical.
D S S S G D D D D
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
Maximum 30 ±12 18 15 80 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum...
