Datasheet Details
| Part number | AON6435 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 289.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6435_AlphaOmegaSemiconductors.pdf |
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Overview: AON6435 30V P-Channel MOSFET General.
| Part number | AON6435 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 289.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6435_AlphaOmegaSemiconductors.pdf |
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The AON6435 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS =-5V) -30V -34A < 17mΩ < 34mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum -30 ±25 -34 -21.5 -95 -12 -10 24 29 31 12.5 4.1 2.6 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 3.4 Max 30 64 4 Units ° C/W ° C/W ° C/W Rev 0: Sep 2011 .aosmd.
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