Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RDS(ON)
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 30V 49A <5.3mΩ <9.1mΩ
Q2 30V 85A <2mΩ <2.5mΩ
Applications
- DC/DC Converters in puting
- POL in Tele and Industrial
100% UIS Tested 100% Rg Tested
Top View
DFN 5X6D S2
Pin 1
Bottom View G2
S1/D2 D1
G1
D1 Pin 1
Top View
Bottom View
Orderable Part Number
Package Type
DFN 5x6D
Form
Minimum Order Quantity
Tape &...