AOTF470 Datasheet | Alpha & Omega Semiconductors

Description The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -Ro Hs pliant Features VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5mΩ (VGS = 10V) G DS AOTF470 TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3m H C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol RθJA RθJC AOTF470 75 ±25 50 36 200 45 300 54 27 -55 to 175 AOTF470 60 2.8 Units V V A m J W °C Units °C/W °C/W Alpha & Omega Semiconductor,...