BLP05H6110XRG transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated double sided ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed fo.
in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
5.
A 110 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 110
Gp (dB) 27
D (%) 75
1.2 Featur.
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