BLP05H6150XR transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated double sided ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed fo.
in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 1.8 to 30
135
.
A 150 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 1.8 to 30
135
174 to 230
DVB-T
174 to 230
VDS
PL
.
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