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ADL8102 Datasheet Low Noise Amplifier

Manufacturer: Analog Devices

Overview: Data Sheet ADL8102 GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22.

General Description

The ADL8102 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1 GHz to 22 GHz.

The ADL8102 provides a typical gain of 27 dB at 9 GHz to 19 GHz, a 2.5 dB typical noise figure from 9 GHz to 19 GHz, a typical output third-order intercept (OIP3) of 25 dBm at 1 GHz to 9 GHz, and a saturated output power (PSAT) of up to 15.5 dBm, which requires FUNCTIONAL BLOCK DIAGRAM Figure 1.

Functional Block Diagram only 110 mA from a 5 V supply voltage.

Key Features

  • Single positive supply (self biased).
  • Gain: 27 dB typical at 9 GHz to 19 GHz.
  • OP1dB: 13.5 dB typical at 1 GHz to 9 GHz.
  • OIP3: 25 dBm typical at 1 GHz to 9 GHz.
  • Noise figure: 2.5 dB typical at 9 GHz to 19 GHz.
  • RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP.

ADL8102 Distributor