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ADL8107 - Low Noise Amplifier

General Description

The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz.

Key Features

  • Single positive supply (self biased).
  • Gain: 24 dB typical at 7 GHz to 16 GHz.
  • OIP3: 29 dBm typical at 7 GHz to 16 GHz.
  • Noise figure: 1.3 dB typical at 7 GHz to 16 GHz.
  • 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions section).

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Other Datasheets by Analog Devices

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet ADL8107 GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz FEATURES ► Single positive supply (self biased) ► Gain: 24 dB typical at 7 GHz to 16 GHz ► OIP3: 29 dBm typical at 7 GHz to 16 GHz ► Noise figure: 1.3 dB typical at 7 GHz to 16 GHz ► 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions section) APPLICATIONS ► Test instrumentation ► Military communications ► Radar GENERAL DESCRIPTION The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. The ADL8107 provides a typical gain of 24 dB at 7 GHz to 16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a 18.