ADL8107 Overview
The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. This low noise amplifier has a high output second-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz, making the ADL8107 suitable for military and test instrumentation applications.
ADL8107 Key Features
- Single positive supply (self biased)
- Gain: 24 dB typical at 7 GHz to 16 GHz
- OIP3: 29 dBm typical at 7 GHz to 16 GHz
- Noise figure: 1.3 dB typical at 7 GHz to 16 GHz
- 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions