Download ADL8100 Datasheet PDF
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ADL8100 Description

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The power dissipation can be lowered at the expense of OIP3 and output power.

ADL8100 Key Features

  • Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz
  • Single positive supply (self biased)
  • High gain: 20 dB typical from 0.01 GHz to 6 GHz
  • High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz
  • RoHS-pliant, 2 mm × 2 mm, 8-lead LFCSP