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ADL8100 - Low Noise Amplifier

General Description

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz.

Key Features

  • Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz.
  • Single positive supply (self biased).
  • High gain: 20 dB typical from 0.01 GHz to 6 GHz.
  • High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz.
  • RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet ADL8100 GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz FEATURES ► Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz ► Single positive supply (self biased) ► High gain: 20 dB typical from 0.01 GHz to 6 GHz ► High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Satellite communication ► Telecommunications ► Civilian radars ► Military radars ► Weather radars ► Electronic warfare GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 GHz to 6 GHz, a 2.