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ADL8102 - Low Noise Amplifier

Datasheet Summary

Description

The ADL8102 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1 GHz to 22 GHz.

Features

  • Single positive supply (self biased).
  • Gain: 27 dB typical at 9 GHz to 19 GHz.
  • OP1dB: 13.5 dB typical at 1 GHz to 9 GHz.
  • OIP3: 25 dBm typical at 1 GHz to 9 GHz.
  • Noise figure: 2.5 dB typical at 9 GHz to 19 GHz.
  • RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP.

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Datasheet Details

Part number ADL8102
Manufacturer Analog Devices
File Size 1.85 MB
Description Low Noise Amplifier
Datasheet download datasheet ADL8102 Datasheet
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Data Sheet ADL8102 GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 9 GHz to 19 GHz ► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz ► OIP3: 25 dBm typical at 1 GHz to 9 GHz ► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz ► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP APPLICATIONS ► Telecommunications ► Satellite communications ► Military radar ► Weather radar ► Civil radar ► Electronic warfare GENERAL DESCRIPTION The ADL8102 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1 GHz to 22 GHz. The ADL8102 provides a typical gain of 27 dB at 9 GHz to 19 GHz, a 2.
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