ADL8102 Description
The ADL8102 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1 GHz to 22 GHz. Functional Block Diagram only 110 mA from a 5 V supply voltage.
ADL8102 Key Features
- Single positive supply (self biased)
- Gain: 27 dB typical at 9 GHz to 19 GHz
- OP1dB: 13.5 dB typical at 1 GHz to 9 GHz
- OIP3: 25 dBm typical at 1 GHz to 9 GHz
- Noise figure: 2.5 dB typical at 9 GHz to 19 GHz
- RoHS-pliant, 3 mm × 3 mm, 16-lead LFCSP