ADL8107 Datasheet | Analog Devices

FEATURES - Single positive supply (self biased) - Gain: 24 d B typical at 7 GHz to 16 GHz - OIP3: 29 d Bm typical at 7 GHz to 16 GHz - Noise figure: 1.3 d B typical at 7 GHz to 16 GHz - 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions section) APPLICATIONS - Test instrumentation - Military munications - Radar GENERAL DESCRIPTION The ADL8107 is a gallium arsenide (Ga As), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (p HEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. The ADL8107 provides a typical gain of 24 d B at 7 GHz to 16 GHz, a 1.3 d B typical noise figure at 7 GHz to 16 GHz, a 18.5 d Bm typical output power for 1 d B pression (OP1d B) at 7 GHz to 16 GHz, and a typical output third-order intercept (OIP3) of 29 d Bm at 7 GHz to 16 GHz, requiring only 90 m A from a 5 V drain supply voltage. This low noise amplifier has a high output second-order intercept (OIP2) of 30.5 d Bm typical at 7 GHz to 16 GHz, making the ADL8107 suitable for military and test instrumentation applications. The ADL8107 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making the ADL8107 ideal for surface-mounted technology (SMT)-based, high density applications. The ADL8107 is housed in a Ro HS-pliant, 2 mm × 2 mm, 8-lead LFCSP. FUNCTIONAL BLOCK DIAGRAM Figure 1. Rev. C DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.All Analog Devices...